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ZXMHC3F381N8
P-channel electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
V (BR)DSS
I DSS
I GSS
-30
-0.5
± 100
V
μA
nA
I D = -250 μ A, V GS = 0V
V DS = -30V, V GS = 0V
V GS = ± 20V, V DS = 0V
Gate-Source threshold
voltage
V GS(th)
-1.0
-3.0
V
I D = -250 μ A, V DS = V GS
Static Drain-Source
on-state resistance
(a)
R DS(on)
0.055
0.080
?
V GS = -10V, I D = -5A
V GS = -4.5V, I D = -4A
Forward
Transconductance
(a) (c)
g fs
14
S
V DS = -15V, I D = -5A
Dynamic
Capacitance
(c)
Input capacitance
C iss
670
pF
Output capacitance
Reverse transfer
capacitance
C oss
C rss
126
70
pF
pF
V DS = -15V, V GS = 0V
f= 1MHz
Switching
(b) (c)
Turn-on-delay time
t d(on)
1.9
ns
Rise time
Turn-off delay time
Fall time
t r
t d(off)
t f
3.0
30
21
ns
ns
ns
V DD = -15V, V GS = -10V
I D = -1A
R G ? 6 Ω
Gate charge
(c)
Total Gate charge
Q g
12.7
nC
Gate-Source charge
Gate-Drain charge
Q gs
Q gd
2.0
2.4
nC
nC
V DS = -15V, V GS = -10V
I D = -5A
Source–Drain diode
Diode forward voltage
(a)
V SD
-0.82
-1.2
V
I S = -1.7A, V GS = 0V
Reverse recovery time
Reverse recovery charge
(c)
(c)
t rr
Q rr
16.5
11.5
ns
nC
I S = -2.1A, di/dt= 100A/ μ s
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - March 2009
? Diodes Incorporated
7
www.diodes.com
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